Temperature dependence of Si1−xGexepitaxial growth using very low pressure chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106399
Reference12 articles.
1. Growth of GeSi/Si strained‐layer superlattices using limited reaction processing
2. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
3. Silicon vapor phase epitaxial growth catalysis by the presence of germane
4. Temperature dependence of growth of GexSi1−xby ultrahigh vacuum chemical vapor deposition
5. Mechanically and thermally stable Si‐Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C
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