Mechanically and thermally stable Si‐Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347360
Reference27 articles.
1. Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors
2. Graded-SiGe-base, poly-emitter heterojunction bipolar transistors
3. Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing
4. High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition
5. GexSi1−xstrained‐layer heterostructure bipolar transistors
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