Dislocations and other strain-induced defects in silicon–germanium (SiGe) nanostructures
Author:
Publisher
Elsevier
Link
http://woodhead.metapress.com/index/L3G481V8V6877717.pdf
Reference66 articles.
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3. GexSi1–x/Si strained-layer superlattice grown by molecular beam epitaxy;Bean;Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films,1984
4. Modeling light trapping and electronic transport of waffle-shaped crystalline thin-film Si solar cells;Brendel;Applied Physics A: Materials Science and Processing,1999
5. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical–mechanical polishing;Currie;Applied Physics Letters,1998
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