Carbon, dopant, and vacancy interactions in germanium
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2798875
Reference35 articles.
1. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
2. Activation and diffusion studies of ion-implanted p and n dopants in germanium
3. Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces
4. On the solubility and diffusivity of the intrinsic point defects in germanium
5. Point defects and dopant diffusion in silicon
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