Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers-Reference-Cited by-同舟云学术

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Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers

Published:2012-01-09 Issue:2 Volume:100 Page:021107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhukov Alexey E.,Kryzhanovskaya Natalia V.,Zubov Fedor I.,Shernyakov Yuri M.,Maximov Mikhail V.,Semenova Elizaveta S.,Yvind Kresten,Asryan Levon V.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3676085

Reference8 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. MOCVD growth of asymmetric 980nm InGaAs/InGaAsP broad-waveguide diode lasers for high power applications

3. A study of the temperature sensitivity of GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers

4. Effect of recombination in separate-confinement heterostructure (SCH) layers on temperature characteristics of semiconductor lasers

5. Temperature-insensitive semiconductor quantum dot laser

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