MOCVD growth of asymmetric 980nm InGaAs/InGaAsP broad-waveguide diode lasers for high power applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. High-power separate-confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide
2. 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers
3. High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers
4. Design considerations and analytical approximations for high continuous-wave power, broad-waveguide diode lasers
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