Implementation of Energy Barrier Layers for 1550 Nm High-Power Laser Diodes

Author:

Veselov Dmitrii,Pikhtin Nikita,Slipchenko Sergey,Kirichenko Iuliia,Podoskin Aleksandr,Shuvalova Natalia,Rudova Natalia,Vavilova Ludmila,Rastegaeva Marina,Bagaev Timur,Svetogorov Vladimir,Padalitsa Anatoliy,Ryaboshtan Yurii,Ladugin Maxim,Marmalyuk Alexander

Publisher

Elsevier BV

Reference13 articles.

1. A numerical calculation of auger recombination coefficients for InGaAsP;Gun'ko N A;InP quantum well heterostructures Semiconductors,2000

2. Nonthreshold Auger recombination in quantum wells;M I Dyakonov;Physical Review B,1994

3. What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?;J Piprek;IEEE journal of quantum electronics,2002

4. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions;D A Veselov;Semiconductors,2016

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