Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining
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AIP Publishing LLC
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Shape modulation due to sub-surface damage difference on N-type 4H–SiC wafer during lapping and polishing;Materials Science in Semiconductor Processing;2022-12
2. X-ray Diffraction Analysis of Damaged Layer During Polishing of Silicon Carbide;International Journal of Precision Engineering and Manufacturing;2022-11-02
3. Compliant grinding and polishing: A review;International Journal of Machine Tools and Manufacture;2020-11
4. Investigation into electrochemical oxidation behavior of 4H-SiC with varying anodizing conditions;Electrochemistry Communications;2019-12
5. Precision slicing of single-crystal SiC using extremely fine fixed-abrasive diamond wire;Transactions of the JSME (in Japanese);2018
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