Shape modulation due to sub-surface damage difference on N-type 4H–SiC wafer during lapping and polishing-Reference-Cited by-同舟云学术

Shape modulation due to sub-surface damage difference on N-type 4H–SiC wafer during lapping and polishing

Published:2022-12 Issue: Volume:152 Page:107124
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Guo Fenglin^ORCID,Shao Chen,Chen Xiufang,Xie Xiejian,Yang Xianglong,Hu Xiaobo,Xu Xiangang

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

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