Abstract
Switching devices based on wide band gap materials as SiC oer a signicant perfor-
mance improvement on the switch level compared to Si devices. A well known example are SiC
diodes employed e.g. in PFC converters. In this paper, the impact on the system level perfor-
mance, i.e. eciency/power density, of a PFC and of a DC-DC converter resulting with the new
SiC devices is evaluated based on analytical optimisation procedures and prototype systems.
There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference6 articles.
1. P. W. Research. [Online]. Available: http: /www. ecn. purdue. edu/WBG/Index. html.
2. D. Marckx, Breakthrough in power electronics from SiC, National Renewable Energy Laboratory (NREL), Subcontract Report NREL/SR-500-38515, March (2006).
3. J. Kolar, J. Biela, and J. Miniboeck, Exploring the pareto front of multi-objective single-phase pfc rectifier design optimization - 99. 2% efficiency vs. 7kW/dm3 power density, in Plenary Publication at the IEEE International Power Electronics and Motion Control Conference, May (2009).
4. B. Wrzecionko, J. Biela, and J. W. Kolar, SiC power semiconductors in HEVs: Influence of junction temperature on power density, chip utilization and efficiency, in 35th Conference of the IEEE Industrial Electronics Society (IECON). Porto, Portugal, Nov. (2009).
5. U. Badstuebner, J. Biela, B. Faessler, D. Hoesli, and J. W. Kolar, An optimized 5kW, 147 W/in3 telecom phase-shift DC-DC converter with magnetically integrated current doubler, in Proc. 24th IEEE Applied Power Electronics Conference and Exposition APEC, (2009).
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献