X-ray Diffraction Analysis of Damaged Layer During Polishing of Silicon Carbide

Author:

Jung Hokyoung,Jeong Seonho,Park Youngwook,Shin Yeongil,Jeong HaedoORCID

Funder

Presidential Committee for Balanced National Development and Busan Metropolitan City

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Mechanical Engineering

Reference15 articles.

1. Ji, S., Zhang, Z., & Wang, F. (2017). Overview of high voltage SiC power semiconductor devices: Development and application. CES Transactions on Electrical Machines and Systems, 1(3), 254–264.

2. Lee, H. S., et al. (2010). Hybrid polishing mechanism of single crystal SiC using mixed abrasive slurry (MAS). CIRP Annals-Manufacturing Technology, 59(1), 333–336.

3. Qiusheng, Y., et al. (2015). Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining. AIP Conference Proceedings, 1653(1), 020091.

4. Lee, H. S., Sung, I. H., et al. (2019). Chemical mechanical polishing: A selective review of R&D trends in abrasive particle behaviors and wafer materials. Tribology and Lubricants, 35(5), 274–285.

5. Lee, H., et al. (2009). The effect of mixed abrasive slurry on CMP of 6H-SiC substrates. Journal of Ceramic Processing Research, 10(3), 378–381.

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