Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1938004
Reference15 articles.
1. Reduction of Dark Current in AlGaN–GaN Schottky-Barrier Photodetectors With a Low-Temperature-Grown GaN Cap Layer
2. High-performance GaN p-n junction photodetectors for solar ultraviolet applications
3. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
4. Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection
5. High responsivity GaN-based UV detectors
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