High responsivity GaN-based UV detectors-Reference-Cited by-同舟云学术

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High responsivity GaN-based UV detectors

Published:2003 Issue:24 Volume:39 Page:1747
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Potì B.,Todaro M.T.,Frassanito M.C.,Pomarico A.,Passaseo A.,Lomascolo M.,Cingolani R.,De Vittorio M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20031132?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Semiconductor ultraviolet detectors

2. Photoconductor gain mechanisms in GaN ultraviolet detectors

3. Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection

4. Origin of persistent photocurrent in GaN/AlGaN multiquantum wells

5. Sze, S.M.: ‘Physics of semiconductor devices’, 2nd(Wiley, New York 1981)

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1. GaN-HEMT on Si as a Robust Visible-Blind UV Detector With High Responsivity;IEEE Sensors Journal;2022-06-15

2. Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor;Scientific Reports;2021-03-30

3. An ultra-sensitive AlGaN/AlN/GaN/AlGaN photodetector: Proposal and investigation;Optik;2020-09

4. High-performance β-Ga2O3 thickness dependent solar blind photodetector;Optics Express;2020-01-29

5. Suspended tungsten trioxide (WO3) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater;Optics Express;2019-11-27

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