Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga2O3 thin-film heterojunction

Abstract

Abstract In this work, an enhanced-performance deep-ultraviolet (DUV) photodetector based on a Ga2O3/lead zirconate titanate (Pb(Zr0.52Ti0.48)O3, PZT) p-n heterojunction is fabricated and characterized for the first time. Compared to a Ga2O3-based device, the heterojunction device achieved a lower dark current of 2.7 × 10−11 A, a higher photo- to dark-current ratio of 2 × 103, a higher responsivity of 5.5 mA W−1, a larger specific detectivity of 2.6 × 1011 Jones and a higher external quantum efficiency of 2.7% at −2 V under 254 nm UV light illumination with an intensity of 500 μW cm−2. The p-PZT/n-Ga2O3 was confirmed to be a potential candidate for the construction of DUV photodetectors with enhanced sensing performance.