Observation of the upper branch (N′Γ) of the nitrogen isoelectronic trap in GaAs1−yPy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323902
Reference31 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP
3. Nitrogen trap bound states in In1−xGaxP
4. Effect of composition and pressure on the nitrogen isoelectronic trap inGaAs1−xPx
5. Direct Study of the Nature of Nitrogen Bound States inGaAs1−xPx:N
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2. Photoluminescence properties of N‐implanted Al0.30Ga0.70As0.62P0.38alloy grown on GaAs0.61P0.39substrates;Journal of Applied Physics;1993-07
3. Deep Level Defects, Luminescence, and the Electro-Optic Properties of SiGe/Si Heterostructures;MRS Proceedings;1993
4. Influence of interference effects on optical transitions with the participation of isoelectronic nitrogen impurities in GaAs1?yPy solid solutions;Journal of Applied Spectroscopy;1988-03
5. DX Deep Centers in AlxGa1-xAs Grown by Liquid-Phase Epitaxy;Japanese Journal of Applied Physics;1984-12-20
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