Direct Study of the Nature of Nitrogen Bound States inGaAs1−xPx:N
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.37.375/fulltext
Reference15 articles.
1. Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP
2. Effect of composition and pressure on the nitrogen isoelectronic trap inGaAs1−xPx
3. Evidence for Radiative Recombination inGaAs1−x Px:N(0.28≲x≲0.45) Involving an Isolated Nitrogen Impurity State Associated with theΓ1Minimum
4. Isoelectronic trap transitions in GaAs1−xPx:N in the region of resonant enhancement (ENN ∼ EΓ, 0.3
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1. Photoluminescence properties of N‐implanted Al0.30Ga0.70As0.62P0.38alloy grown on GaAs0.61P0.39substrates;Journal of Applied Physics;1993-07
2. Corelike nature of the PdMVVshift in Pd-based alloys;Physical Review B;1992-06-15
3. Resonant excitation of nitrogen bound excitons in Ga As1−xPx alloys;Solid State Communications;1987-04
4. Photoluminescence of GaAs1-xPx:N with 0.67 ≦ × < 1 at various excitation levels and N doping;Physica Status Solidi (a);1980-11-16
5. Stress dependence of the nitrogen-bound excitons in GaP: N;Physical Review B;1980-11-15
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