Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures
Author:
Affiliation:
1. ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Funder
Swiss National Science Foundation (Schweizerische Nationalfonds)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference19 articles.
1. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
2. Power electronics on InAlN/(In)GaN: Prospect for a record performance
3. Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers
4. Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors
5. Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?
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1. Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition;Applied Physics Express;2022-01-10
2. Study of silicon nitride deposition in III-N MOVPE reactors;Journal of Crystal Growth;2020-12
3. In‐depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle‐resolved X‐ray photoelectron spectroscopy;Surface and Interface Analysis;2020-06-26
4. Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs;Journal of Crystal Growth;2019-07
5. III-N Epitaxy on Si for Power Electronics;High Mobility Materials for CMOS Applications;2018
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