Developmental mechanism for the resistance change effect in perovskite oxide-based resistive random access memory consisting of Bi2Sr2CaCu2O8+δ bulk single crystal-Reference-Cited by-同舟云学术

Developmental mechanism for the resistance change effect in perovskite oxide-based resistive random access memory consisting of Bi2Sr2CaCu2O8+δ bulk single crystal

Published:2011-10-15 Issue:8 Volume:110 Page:084506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hanada A.,Kinoshita K.,Matsubara K.,Fukuhara T.,Kishida S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3651465

Reference21 articles.

1. Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface

2. Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides

3. Origin of Negative Differential Resistance Observed on Bipolar Resistance Switching Device with Ti/Pr0.7Ca0.3MnO3/Pt Structure

4. Enhancement of Switching Capability on Bipolar Resistance Switching Device with Ta/Pr0.7Ca0.3MnO3/Pt Structure

5. Relationship between resistive switching characteristics and band diagrams ofTi/Pr1−xCaxMnO3junctions

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3. The measurement of the diffusion coefficient of oxygen ions in the YBa2Cu3O7-x layer of the electro-resistance memory;PRZEGLĄD ELEKTROTECHNICZNY;2019-07-05

4. Enhanced Switching Stability in Forming-Free SiN x Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure;Advanced Electronic Materials;2018-11-29

5. Measurement of the thickness of the oxygen-depleted layer in the Ag/YBa2Cu3O7-x/Ag structures of the electro-resistance memory;PRZEGLĄD ELEKTROTECHNICZNY;2018-08-05