Effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing
Author:
Affiliation:
1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Shanxi Province
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0046359
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1. Nanoionics-based resistive switching memories
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