Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories-Reference-Cited by-同舟云学术

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Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

Published:2013-07-19 Issue:8 Volume:13 Page:3671-3677
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chen Jui-Yuan¹,Hsin Cheng-Lun¹²³,Huang Chun-Wei¹,Chiu Chung-Hua¹,Huang Yu-Ting¹,Lin Su-Jien²,Wu Wen-Wei¹,Chen Lih-Juann²

Affiliation:

1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu City, Taiwan 300

2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu City, Taiwan 300

3. Department of Electrical Engineering, National Central University, Zhongli City, Taiwan 320

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl4015638

Reference33 articles.

1. Overview of candidate device technologies for storage-class memory

2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

3. Nanoionics-based resistive switching memories

4. High-Density Crossbar Arrays Based on a Si Memristive System

5. High density 3D memory architecture based on the resistive switching effect

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