Enhanced Switching Stability in Forming-Free SiN x Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure-Reference-Cited by-同舟云学术

Enhanced Switching Stability in Forming-Free SiN x Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure

Published:2018-11-29 Issue:2 Volume:5 Page:1800739
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Jiang Peng Fei¹,Gao Hai Xia¹,Yang Mei²,Zhang Zhen Fei¹,Ma Xiao Hua¹,Yang Yin Tang¹^ORCID

Affiliation:

1. School of Microelectronics; Xidian University; No. 2 South Taibai Road Xi'an Shaanxi 710071 China

2. School of Advanced Materials and Nanotechnology; Xidian University; No. 2 South Taibai Road Xi'an Shaanxi 710071 China

Funder

National Natural Science Foundation of China

Ministry of Education of the People's Republic of China

Natural Science Foundation of Shaanxi Province

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201800739/fullpdf

Reference36 articles.

1. Nanoionics-based resistive switching memories

2. Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

3. The Effect of Silicon Oxide Based RRAM with Tin Doping

4. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

5. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

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