1.55μm emission from InAs∕GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2337163
Reference9 articles.
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4. Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb
5. Strain engineering of self-organized InAs quantum dots
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