MOVPE‐Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications-Reference-Cited by-同舟云学术

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MOVPE‐Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications

Published:2018-09-21 Issue:12 Volume:255 Page:1800182
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Sala Elisa M.¹^ORCID,Arikan Ismail F.¹,Bonato Leo¹,Bertram Frank²,Veit Peter²,Christen Jürgen²,Strittmatter André²,Bimberg Dieter¹³

Affiliation:

1. Institut für FestkörperphysikTechnische Universität BerlinHardenbergstraße 3610623 BerlinGermany

2. Otto von Guericke Universität MagdeburgUniversitätsplatz 239016 MagdeburgGermany

3. Chinese‐Geman Center on Green Photonics of the Chinese Academy of Sciences at CIOMPChangchun 13033China

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800182

Reference33 articles.

1. The QD-Flash: a quantum dot-based memory device

2. Antimony-based quantum dot memories

3. A novel nonvolatile memory based on self-organized quantum dots

4. Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

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