Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD-Reference-Cited by-同舟云学术

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Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD

Published:2020-11-01 Issue:11 Volume:10 Page:115013
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Jinno Riena¹^ORCID,Kaneko Kentaro¹²³^ORCID,Fujita Shizuo¹²^ORCID

Affiliation:

1. Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

2. Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8520, Japan

3. Engineering Education Research Center, Kyoto University, Kyoto 615-8530, Japan

Funder

Advanced Research Program for Energy and Environmental Technologies of the New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0020464

Reference39 articles.

1. Current status of Ga2O3power devices

2. Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

3. A review of Ga2O3materials, processing, and devices

4. Polymorphism of Ga2O3 and the System Ga2O3—H2O

5. Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices;Materials Science in Semiconductor Processing;2025-01

2. Thermal stability and phase transformation of α-, κ(ε)-, and γ-Ga2O3 films under different ambient conditions;Applied Physics Letters;2024-08-26

3. Growth of α-Ga2O3 from Gallium Acetylacetonate under HCl Support by Mist Chemical Vapor Deposition;Nanomaterials;2024-07-18

4. Zr doping in pulsed-laser-deposited α - Ga2O3 for device applications;Physical Review Applied;2024-06-07

5. Si-doped (AlGa)₂O₃ growth on a-, m- and r-plane α-Al₂O₃ substrates by molecular beam epitaxy;Japanese Journal of Applied Physics;2024-05-01

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