Stress effects induced in SiGe strained layers by low-temperature ultraviolet-assisted oxidation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366897
Reference25 articles.
1. UHVCVD growth of Si/SiGe heterostructures and their applications
2. Investigation of luminescence in strained SiGe/Si modulated quantum well and wire structures
3. Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures
4. Oxidation studies of SiGe
5. Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
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1. Fabrication of compositional graded Si1−xGex layers by using thermal oxidation;Applied Physics Letters;2009-05-18
2. Laser applications in transparent conducting oxide thin films processing;Handbook of Thin Films;2002
3. Characteristics of dielectric layers formed by low-temperature vacuum ultraviolet-assisted oxidation of SiGe layers;Journal of Materials Research;1999-09
4. In Situ Ultraviolet-Assisted Pulsed Laser Deposition of Y[sub 2]O[sub 3] Thin Films;Electrochemical and Solid-State Letters;1999
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