Fabrication of compositional graded Si1−xGex layers by using thermal oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3139070
Reference19 articles.
1. Effects of Ge concentration on SiGe oxidation behavior
2. Rapid thermal oxidation of GeSi strained layers
3. Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation
4. Microstructure of oxidized layers formed by the low‐temperature ultraviolet‐assisted dry oxidation of strained Si0.8Ge0.2layers on Si
5. Stress effects induced in SiGe strained layers by low-temperature ultraviolet-assisted oxidation
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1. Strain behavior of epitaxial Si1−xCx films on silicon substrates during dry oxidation;Thin Solid Films;2013-11
2. Engineered core-shell Si1−xGex/Ge nanowires fabricated by focused ion beam and oxido-reduction;Journal of Applied Physics;2013-07-21
3. A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement;Current Applied Physics;2013-06
4. Nano-structuring in SiGe by oxidation induced anisotropic Ge self-organization;Journal of Applied Physics;2013-03-14
5. Ge Oxidation in the Remaining Cores of Si1–xGex Nanowires After Prolonged Oxidation;Journal of Nanoscience and Nanotechnology;2012-04-01
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