Ultralow resistance Si-containing Ti∕Al∕Mo∕Au Ohmic contacts with large processing window for AlGaN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2206127
Reference18 articles.
1. Fabrication and performance of GaN electronic devices
2. Hall measurements and contact resistance in doped GaN/AlGaN heterostructures
3. Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy
4. Low Resistance Ti/Al/Mo/Au Ohmic Contacts for AlGaN/GaN Heterostructure Field Effect Transistors
5. Comparative study of Ti∕Al∕Mo∕Au, Mo∕Al∕Mo∕Au, and V∕Al∕Mo∕Au ohmic contacts to AlGaN∕GaN heterostructures
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1. A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs;IEEE Access;2021
2. Ultrawide bandgap Al x Ga1–x N channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1;Applied Physics Express;2020-09-01
3. Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures;IEEE Electron Device Letters;2018-06
4. Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates;Japanese Journal of Applied Physics;2018-02-14
5. Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures;Semiconductors;2017-04
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