The pyroelectric coefficient of free standing GaN grown by HVPE
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4964265
Reference37 articles.
1. Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
2. High‐power GaN‐based semiconductor lasers
3. Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy
4. Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1−xN
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