High‐power GaN‐based semiconductor lasers
Author:
Affiliation:
1. Development Center, Sony Shiroishi Semiconductor Inc., 3‐53‐2 Shiratori, Shiroishi‐shi, Miyagi‐ken 989‐0734, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304086
Reference17 articles.
1. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
2. High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise
3. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
4. Optical Disk Recording Using a GaN Blue-Violet Laser Diode
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