Low‐temperature Si/Si1−xGex/Si heterostructure growth at high Ge fractions by low‐pressure chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108105
Reference9 articles.
1. Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layers
2. High-mobility modulation-doped SiGe-channel p-MOSFETs
3. Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
4. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
5. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
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1. Mixed silicon–germanium clusters, SixGeyHz, in the gas phase by flash pyrolysis of silane and germane;Chemical Physics Letters;2008-06
2. GeHx (x=0–3) and GenHx (n=2–7) in flash pyrolysis of GeH4;Chemical Physics Letters;2002-01
3. Chapter 4 Epitaxial growth techniques: Low-temperature epitaxy;Semiconductors and Semimetals;2001
4. In situ characterization of thin Si 1−x Ge x films on Si(100) by spectroscopic ellipsometry;Thin Solid Films;2000-07
5. CVD Si 1-x Ge x epitaxial growth and its applications to MOS devices;SPIE Proceedings;1999-09-01
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