In situ characterization of thin Si 1−x Ge x films on Si(100) by spectroscopic ellipsometry
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Complementary in-situ and post-deposition diagnostics of thin film semiconductor structures
2. Optical spectra of SixGe1−xalloys
3. Ellipsometry for rapid characterization of Si1−xGexlayers
4. Spectroscopic ellipsometry of optical transitions in thin strained Si1−xGex films
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Micro-combinatorial sampling of the optical properties of hydrogenated amorphous $$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ for the entire range of compositions towards a database for optoelectronics;Scientific Reports;2020-11-06
2. Electrical and materials characterization of GSMBE grown Si1−x−yGexCylayers for heterojunction bipolar transistor applications;Semiconductor Science and Technology;2004-12-10
3. Spectroscopic ellipsometry study of a self-organized Ge dot layer;Journal of Applied Physics;2003-08-15
4. Short-period Si/Si1−xGex multiple quantum wells: real-time spectro-ellipsometric characterization during growth by synchrotron-radiation-excited chemical-beam epitaxy;Applied Surface Science;2003-06
5. Investigation of a single Ge dots layer and its evolution upon oxidation by spectroscopic ellipsometry;Physica E: Low-dimensional Systems and Nanostructures;2003-04
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