Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1358321
Reference22 articles.
1. Thin film SOI emerges
2. Physical basis and limitation of universal mobility behavior in fully depleted silicon-on-insulator Si inversion layers
3. Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
4. Self‐consistent quantum‐mechanical calculations in ultrathin silicon‐on‐insulator structures
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