Self‐consistent quantum‐mechanical calculations in ultrathin silicon‐on‐insulator structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358382
Reference20 articles.
1. CMOS/SOI hardening at 100 Mrad (SiO/sub 2/)
2. Demonstration of the potential of accumulation-mode MOS transistors on SOI substrates for high-temperature operation (150-300 degrees C)
3. Investigation of floating body effects in silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors
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