Ti-based nonalloyed Ohmic contacts for Al0.15Ga0.85N∕GaN high electron mobility transistors using regrown n+-GaN by plasma assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Ti-based nonalloyed Ohmic contacts for Al0.15Ga0.85N∕GaN high electron mobility transistors using regrown n+-GaN by plasma assisted molecular beam epitaxy

Published:2008-09-08 Issue:10 Volume:93 Page:102102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Seo Hui-Chan,Chapman Patrick,Cho Hyun-Ick,Lee Jung-Hee,Kim Kyekyoon (Kevin)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2979702

Reference13 articles.

1. Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts ton-type GaN

2. Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices

3. Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN

4. Contact mechanisms and design principles for nonalloyed ohmic contacts to n-GaN

5. Mo∕Al∕Mo∕Au Ohmic contact scheme for Al[sub x]Ga[sub 1−x]N∕GaN high electron mobility transistors annealed at 500 °C

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