EFFECT OF RAPID THERMAL ANNEALING TEMPERATURE ON THE ELECTROPHYSICAL PROPERTIES OF THE OHMIC CONTACT OF Ti/Al /Ni METALLIZATION TO THE GaN/AlGaN HETEROSTRUCTURE-Reference-Cited by-同舟云学术

EFFECT OF RAPID THERMAL ANNEALING TEMPERATURE ON THE ELECTROPHYSICAL PROPERTIES OF THE OHMIC CONTACT OF Ti/Al /Ni METALLIZATION TO THE GaN/AlGaN HETEROSTRUCTURE

Published:2022-06-13 Issue:3 Volume:20 Page:13-19
ISSN:2708-0382
Container-title:Doklady BGUIR
language:
Short-container-title:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki

Author:

YUNIK A. D.¹,SOLOVJOV J. A.¹,Zhyhulin D. V.¹

Affiliation:

1. JSC “INTEGRAL” – “INTEGRAL” Holding Managing Company

Publisher

Belarusian State University of Informatics and Radioelectronics

Subject

General Economics, Econometrics and Finance

Reference8 articles.

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2. Greco G., Iucolano F., Roccaforte F. Ohmic contacts to Gallium Nitride materials. Applied Surface Science. 2016;383:24-345. DOI:10.1016/j.apsusc.2016.04.016.

3. Placidi M., Pérez-Tomás A., Constant A., Rius G., Mestres N., Millán J. & Godignon P. Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN. Applied Surface Science. 2009;255(12):6057-6060. DOI:10.1016/j.apsusc.2008.12.084.

4. Seo H.-C., Chapman P., Cho H.-I., Lee J.-H. & Kim K. (Kevin). Ti-based nonalloyed Ohmic contacts for Al0.15Ga0.85N∕GaN high electron mobility transistors using regrown n+-GaN by plasma assisted molecular beam epitaxy. Applied Physics Letters. 2008;93(10):102102. DOI:10.1063/1.2979702.

5. Lee H.-S., Lee D. S. & Palacios T. AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology. IEEE Electron Device Letters. 2011;32(5):623-625. DOI:10.1109/led.2011.2114322.

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1. Effect of Rapid Thermal Annealing Conditions on the Specific Resistance of the Ohmic Contacts of Ti/Al/Ni/Au Metallization to the GaN/AlGaN Heterostructure;Doklady BGUIR;2023-01-03

2. Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas;Doklady BGUIR;2022-12-09