Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts ton-type GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119305
Reference10 articles.
1. Very low resistance multilayer Ohmic contact to n‐GaN
2. Low resistance ohmic contacts on wide band‐gap GaN
3. Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN
4. Ohmic contacts to n-type GaN using Pd/Al metallization
5. The effects of contact size and non-zero metal resistance on the determination of specific contact resistance
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