Extra half-plane shortening of dislocations as an origin of tensile strain in Si-doped (Al)GaN
Author:
Affiliation:
1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
2. Institute of Physics, Humboldt University of Berlin, Newtonstr.15, 12489 Berlin, Germany
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5111664
Reference35 articles.
1. 13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications
2. Advances in group III-nitride-based deep UV light-emitting diode technology
3. Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
4. Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors
5. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes
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