Surface passivation ofn-type crystalline Si by plasma-enhanced-chemical-vapor-deposited amorphous SiCx:H and amorphous SiCxNy:H films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1527230
Reference16 articles.
1. Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation
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5. Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx:H films
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2. Structural and optical properties o plasma-deposited a-C:H:Si:O:N films;Polímeros;2021
3. Conduction mechanisms in hydrogenated amorphous silicon carbide;Journal of Non-Crystalline Solids;2020-01
4. Surface passivation of crystalline silicon by intrinsic a-Si:H films deposited in remote low frequency inductively coupled plasma;Applied Surface Science;2019-09
5. Near-field scanning microscopy and physico-chemical analysis versus time of SiCN:H thin films grown in Ar/NH3/TMS gas mixture using MW-Plasma CVD at 400 °C;Plasma Processes and Polymers;2018-07-06
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