Near-field scanning microscopy and physico-chemical analysis versus time of SiCN:H thin films grown in Ar/NH3/TMS gas mixture using MW-Plasma CVD at 400 °C-Reference-Cited by-同舟云学术

Near-field scanning microscopy and physico-chemical analysis versus time of SiCN:H thin films grown in Ar/NH3/TMS gas mixture using MW-Plasma CVD at 400 °C

Published:2018-07-06 Issue:10 Volume:15 Page:1800066
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Process Polym

Author:

Plujat Béatrice¹^ORCID,Glénat Hervé²,Hamon Jonathan³,Gazal Yoan⁴,Goullet Antoine³,Hernandez Emmanuel¹,Quoizola Sébastien¹,Thomas Laurent¹

Affiliation:

1. Université de Perpignan VIA DOMITIA; 52 Avenue Paul Alduy66100 Perpignan France

2. Laboratoire PROMES CNRS; Tecnosud - Rambla de la Thermodynamique66100 Perpignan France

3. Institut des Matériaux Jean Rouxel; 2 Rue de la Houssinière, BP3222944322 Nantes France

4. Laboratoire CIRIMAT-ENSIACET; 4 Allée Emile Monso, BP4436231030 Toulouse France

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/ppap.201800066/fullpdf

Reference45 articles.

1. Surface and optical analysis of SiCx films prepared by RF-RMS technique

2. Preparation and characterizations of amorphous nanostructured SiC thin films by low energy pulsed laser deposition

3. Synthesis of nanostructured SiC using the pulsed laser deposition technique

4. Amorphous to crystalline phase transition in pulsed laser deposited silicon carbide

5. Comparison between single and multilayered a-SiC:H coatings prepared by multi-frequency PACVD: Mechanical properties

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