Interfacial energy barrier height of Al2O3/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy
Author:
Affiliation:
1. National Institute for Materials Science (NIMS), 1-1 Namiki, 305-0044 Tsukuba, Japan
2. National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, 305-8568 Tsukuba, Japan
Funder
Japan Society for the Promotion of Science London (JSPS London)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5001070
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1. A roadmap for future wide bandgap semiconductor power electronics
2. 1 Ω On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250 °C
3. Zr/oxidized diamond interface for high power Schottky diodes
4. Electrical characterization of diamond PiN diodes for high voltage applications
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