Diamond/γ-alumina band offset determination by XPS

Author:

Cañas J.,Alba G.,Leinen D.,Lloret F.,Gutierrez M.,Eon D.,Pernot J.,Gheeraert E.,Araujo D.

Funder

Horizon 2020

Ministerio de Economía y Competitividad

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference36 articles.

1. The boron acceptor in diamond;Thonke;Semicond. Sci. Technol.,2003

2. An overview of high-k oxides on hydrogenated-diamond for metal-oxide-semiconductor capacitors and field-effect transistors;Liu;Sensors,2018

3. Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric;Liu;Appl. Phys. Lett.,2013

4. C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation;Kawarada;Appl. Phys. Lett.,2014

5. Direct determination of the barrier height of Au ohmic-contact on a hydrogen-terminated diamond (001) surface;Kono;Diam. Relat. Mater.,2017

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