Low frequency noise and trap density in GaN/AlGaN field effect transistors-Reference-Cited by-同舟云学术

Low frequency noise and trap density in GaN/AlGaN field effect transistors

Published:2019-10-28 Issue:18 Volume:115 Page:183501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sai P.¹²^ORCID,Jorudas J.³^ORCID,Dub M.¹²^ORCID,Sakowicz M.⁴^ORCID,Jakštas V.³,But D. B.¹²⁵^ORCID,Prystawko P.⁴,Cywinski G.¹⁵^ORCID,Kašalynas I.³^ORCID,Knap W.¹⁵⁶^ORCID,Rumyantsev S.¹^ORCID

Affiliation:

1. CENTERA Laboratories, Institute of High Pressure Physics PAS, ul. Sokołowska 29/37, 01-142 Warsaw, Poland

2. V. Ye. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 pr. Nauki, 03680 Kyiv, Ukraine

3. Terahertz Photonics Laboratory, Center for Physical Sciences and Technology (FTMC), Saulėtekio al. 3, LT-10257 Vilnius, Lithuania

4. Institute of High Pressure Physics PAS, ul. Sokołowska 29/37, 01-142 Warsaw, Poland

5. CEZAMAT, Warsaw University of Technology, 02-822 Warsaw, Poland

6. Laboratoire Charles Coulomb, University of Montpellier and CNRS UMR 5221, 34950 Montpellier, France

Funder

Narodowe Centrum Nauki

Lietuvos Mokslo Taryba

Fundacja na rzecz Nauki Polskiej

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5119227

Reference29 articles.

1. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

2. Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

3. Characterization of flicker noise in GaN-based MODFET's at low drain bias

4. Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors

5. Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT

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