Low‐temperature SiO2growth using fluorine‐enhanced thermal oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96181
Reference6 articles.
1. Fluorine‐enhanced plasma growth of native layers on silicon
2. The Formation of SiO2 in an RF Generated Oxygen Plasma: II . The Pressure Range Above 10 mTorr
3. Plasma anodization of silicon and its application to the fabrication of devices and integrated circuits
4. Microwave plasma stream transport system for low temperature plasma oxidation
5. Fluorine‐enhanced thermal oxidation of silicon in the presence of NF3
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1. Interface reactions at TiN/HfSiON gate stacks: Dependence on the electrode structure and deposition method;Science and Technology of Advanced Materials;2007-01
2. Gate Dielectrics;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27
3. Thermal Oxidation and Nitridation;Fundamentals of Semiconductor Processing Technology;1995
4. Role of implantation‐induced defects in surface‐oriented diffusion of fluorine in silicon;Journal of Applied Physics;1994-09-15
5. Segregation and defect termination of fluorine at SiO2/Si interfaces;Applied Physics Letters;1993-01-25
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