Low‐temperature SiO2growth using fluorine‐enhanced thermal oxidation

Author:

Morita M.,Aritome S.,Tsukude M.,Murakawa T.,Hirose M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Interface reactions at TiN/HfSiON gate stacks: Dependence on the electrode structure and deposition method;Science and Technology of Advanced Materials;2007-01

2. Gate Dielectrics;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

3. Thermal Oxidation and Nitridation;Fundamentals of Semiconductor Processing Technology;1995

4. Role of implantation‐induced defects in surface‐oriented diffusion of fluorine in silicon;Journal of Applied Physics;1994-09-15

5. Segregation and defect termination of fluorine at SiO2/Si interfaces;Applied Physics Letters;1993-01-25

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