Plasma anodization of silicon and its application to the fabrication of devices and integrated circuits
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Defect formation during high pressure low temperature oxidation of silicon;Katz;J. Electrochem. Soc.,1978
2. Silicon oxidation in an oxygen plasma excited by microwaves;Ligenza;J. Appl. Phys.,1965
3. Influence of film stress and thermal oxidation on the generation of dislocations in silicon;Bohg;Appl. Phys. Lett.,1978
4. Topology of silicon structures with recessed SiO2;Bassous;J. Electrochem. Soc.,1976
5. Anodization of silicon in RF induced oxygen plasma;Ho;Jpn. J. Appl. Phys. Suppl.,1980
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1. Real‐time observation of ultrathin silicon oxide film growth using rapid ellipsometry;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07
2. Silicon wafer orientation dependence in the initial plasma oxidation processes;Solid State Communications;1993-11
3. Oxidation of silicon in r.f. plasma measured by rapid in situ during process ellipsometry;Thin Solid Films;1993-05
4. Growth of silicon oxide on silicon in the thin film region in an oxygen plasma;Solid State Communications;1992-08
5. Plasma density dependence of the oxidation rate of Si byinsituduring process rapid ellipsometry;Journal of Applied Physics;1992-05-15
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