Growth of silicon oxide on silicon in the thin film region in an oxygen plasma
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. Low Temperature Oxidation of Silicon in a Microwave‐Discharged Oxygen Plasma
2. New oxide growth law and the thermal oxidation of silicon
3. Insituspectroscopic ellipsometry study of the electron cyclotron resonance plasma oxidation of silicon and interfacial damage
4. Study of oxygen transport processes during plasma anodization of Si between room temperature and 600 °C
5. Plasma anodization of silicon and its application to the fabrication of devices and integrated circuits
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