Study of oxygen transport processes during plasma anodization of Si between room temperature and 600 °C
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333800
Reference24 articles.
1. Silicon Oxide Films Grown in a Microwave Discharge
2. Enhanced plasma oxidation at low temperature using a thin solid electrolyte film
3. Plasma anodization of silicon at room temperature
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