Enhanced plasma oxidation at low temperature using a thin solid electrolyte film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92116
Reference12 articles.
1. Auger Spectroscopic Evidence That Plasma Anodization Involves Mass Transfer from the Cathode to the Anode
2. Comparative Study of Plasma Anodization of Silicon in a Column of a dc Glow Discharge
3. The negative role of the fast electrons in the microwave oxidation of silicon
4. The negative role of the fast electrons in the microwave oxidation of silicon
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1. A mechanism of low-temperature stimulated processes in plasma anodization of metals and semiconductors;Semiconductors;2004-11
2. Anomaly in the growth rate of anodic oxide films due to the presence of a (Sm + Sm2O3) overlayer at a GaAs surface;Thin Solid Films;1996-01
3. On the influence of an ultrathin Al overlayer on GaAs plasma oxide growth kinetics;Thin Solid Films;1994-09
4. Study of aluminium anodization in sulphuric and chromic acid solutions—II. Oxide morphology and structure;Electrochimica Acta;1990-06
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