Influence of film stress and thermal oxidation on the generation of dislocations in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90207
Reference8 articles.
1. Topology of Silicon Structures with Recessed SiO2
2. Preparation and Properties of SiO2 Films from SiH4 ‐ CO 2 ‐ H 2
3. Oxynitride Deposition Kinetics in a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System
4. Physicochemical Properties of Chemical Vapor‐Deposited Silicon Oxynitride from a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System
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