Segregation and defect termination of fluorine at SiO2/Si interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108961
Reference14 articles.
1. Low‐temperature SiO2growth using fluorine‐enhanced thermal oxidation
2. Radiation Response of MOS Capacitors Containing Fluorinated Oxides
3. Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
4. The effect of fluorine in silicon dioxide gate dielectrics
5. Improved hot-carrier resistance with fluorinated gate oxides
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