Optical characterizations of (111) oriented InGaAs/InAlAs strained quantum wells grown on InP substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349004
Reference18 articles.
1. Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum Wells
2. Enhancement in Optical Transition in (111)-Oriented GaAs-AlGaAs Quantum Well Structures
3. Near‐ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasers
4. Enhancement of Quantum-Confined Stark Effect in GaAs-AlGaAs Quantum Wells by Quantization along the [111] Axis
5. Strain-generated electric fields in [111] growth axis strained-layer superlattices
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1. On the optimum off-cut angle for the growth on InP(111)B substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B;2019-05
2. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01
3. Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate;Journal of Applied Physics;2012-01-15
4. First- and second-order piezoelectricity in III-V semiconductors;Physical Review B;2011-11-28
5. Confirmation of the pyroelectric coefficient of strained InxGa1−xAs/GaAs quantum well structures grown on (111)B GaAs by differential photocurrent spectroscopy;Journal of Applied Physics;2002-03
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